AO446830V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4468 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 10.5Aextremely low RDS (ON). This device is ideal for load switch RDS (ON) (at VGS=10V) 0.2. Ao4468.pdf Size:1303K kexin. AO4468 30V N-Channel MOSFET General Description Product Summary VDS I D (at V GS =10V) 10.5A R DS(ON) (at V GS =10V) AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch.
AO4468
View Lab Report - AO4468 from FIN 8777 at Hasilpur Science college for Girls. AO4468 30V N-Channel MOSFET General Description Product Summary The AO4468 combines advanced trench MOSFET. AO4468 Description:MOSFET N-CH 30V 10.5A 8SOIC Manufacturers:Alpha and Omega Semiconductor, Inc. In Stock:New original, 55600 pcs Stock Available. Data sheet:AO4468.pdf Quote: RFQ; AO4456. AOS SOP-8 Manufacturers:AOS In Stock:New original, 22000 pcs Stock Available. Data sheet: Quote: RFQ; AO4474 Description:MOSFET N-CH 30V. AO4468 datasheet, cross reference, circuit and application notes in pdf format.
MOSFET N-CH 30V 11.6A 8-SOIC
Alpha & Omega Semiconductor Inc
1.AO4468.pdf (5 pages)
MOSFET N-Channel, Metal Oxide
Logic Level Gate
14 mOhm @ 11.6A, 10V
30V
11.6A
3V @ 250µA
24nC @ 10V
1200pF @ 15V
3.1W
Surface Mount
8-SOIC
Lead free / RoHS Compliant
785-1038-2
Available stocks
Part Number
Quantity
AO4468
AOS
34 800
AO4468
AOSMD
8 000
AO4468
N/A
300
AO4468,26325,SOP-8,VBSEMI
AO4468,26325,SOP-8,VBSEMI
AO4468,30500,SOP-8,TY,2020+
AO4468.,1911,SO8,AO
- Current page: 1 of 5
Absolute Maximum Ratings T
Drain-Source Voltage
Continuous Drain
Pulsed Drain Current
Ao4468 Mosfet Datasheet
Avalanche energy L=0.1mH
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
The AO4468 combines advanced trench MOSFET
technology with a low resistance package to provide
and battery protection applications.
DS(ON)
B
C
C
T
Ao4468 Mosfet Driver
T
. This device is ideal for load switch
A
A
=25° C
=25° C
C
A
S
=25° C unless otherwise noted
S
Steady-State
G
Symbol
V
I
E
T
www.aosmd.com
DM
J
GS
D
, I
R
AR
JA
AR
V
R
100% UIS Tested
D
DS
DS(ON)
Typ
59
(at V
GS
=10V)
GS
Maximum
=10V)
10.5
3.1
30
19
2
G
40
24
S
10.5A
< 23m
Units
° C/W
° C/W
° C
V
Ao4468 Mosfet Board
A
Page 1 of 5
AO4468 Summary of contents
Page 1
. General Description The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . This device is ideal for load switch DS(ON) and battery protection applications. SOIC-8 Top View Absolute Maximum Ratings T =25° C unless otherwise noted A Parameter Drain-Source Voltage .
Page 2
. FR-4 board with 2oz. Copper still air environment with T =150° C, using ≤ 10s junction-to-ambient thermal resistance. =150° C. Ratings are based on low frequency and duty cycles to keep J(MAX) and lead to ambient. JL =150° C. The SOA curve provides a single pulse ratin g. J(MAX) www.aosmd.com AO4468 Min Typ Max Units =55° C .
Page 3
. Figure 2: Transfer Characteristics (Note E) 1.8 1.6 1.4 1 Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 I =10.5A D 1.0E+01 40 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO4468 25° (Volts =4. = =10V GS I =10. 100 125 150 175 200 0 Temperature (° (Note E) 125° C 25° .
Page 4
. 100 0.00001 Figure 11: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.01 0.1 1 Pulse Width (s) www.aosmd.com AO4468 C iss C oss (Volts =25° 0.001 0.1 10 1000 Pulse Width (s) Ambient (Note F) .
Page 5
. VDC - DUT Resistive Switching Test Circuit & Waveforms RL Vds + DUT Vdd VDC - Vgs d(on 1 Vds + Vgs Vdd VDC Id - Vgs Diode Recovery Test Circuit & Waveforms Idt Vgs Isd Vdd VDC - Vds www.aosmd.com AO4468 Qg Qgd Charge 90% 10 d(off) t off DSS dI/ Vdd Page .
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AO4468 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AO4468
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3.1 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.4 V
Максимально допустимый постоянный ток стока |Id|: 10.5 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 3.5 ns
Выходная емкость (Cd): 110 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.017 Ohm
Fontlab 7. Тип корпуса: SO-8
AO4468 Datasheet (PDF)
0.1. ao4468.pdf Size:315K _aosemi
AO446830V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4468 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 10.5Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
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0.2. ao4468.pdf Size:1303K _kexin
SMD Type MOSFETN-Channel MOSFETAO4468 (KO4468)SOP-8 Features VDS (V) = 30V1.50 0.15 ID = 10.5 A (VGS = 10V) RDS(ON) 17m (VGS = 10V)1 Source 5 Drain RDS(ON) 23m (VGS = 4.5V)6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gat
Opera download for windows 10. 9.1. ao4466.pdf Size:324K _aosemi
AO446630V N-Channel MOSFETGeneral Description Product SummaryThe AO4466 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. This ID = 10A (VGS = 10V)device is suitable for use as a load switch or in PWM RDS(ON)
9.2. ao4466l.pdf Size:199K _aosemi
AO4466N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4466/L uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. ThisID = 9.4A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)
9.3. ao4466.pdf Size:1389K _kexin
SMD Type MOSFETN-Channel MOSFETAO4466 (KO4466)SOP-8 Features VDS (V) = 30V ID = 9.4 A (VGS = 10V)1.50 0.15 RDS(ON) 23m (VGS = 10V) RDS(ON) 35m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate
Другие MOSFET. AO4449, AO4450, AO4452, AO4453, AO4454, AO4455, AO4459, AO4466, BF245A, AO4476A, AO4478, AO4480, AO4482, AO4484, AO4485, AO4486, AO4488.
Список транзисторов
Обновления
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02https://cdn.shopify.com/s/files/1/0526/5512/8741/files/facebook-download-for-mac-os-x.pdf. Artisan.